| B |
billion; boron |
| Ba |
barium |
| BARC |
bottom antireflective coating |
| BASE |
Boston Area Semiconductor Education (Council) |
| BAW |
bulk acoustic wave |
| BC |
bias contrast |
| BDEV |
behavior-level deviation |
| BDS |
Brownian Dynamics Simulation |
| Be |
beryllium |
| BEOL |
back end of line |
| BESOI |
bonded and etchback silicon on insulator |
| BF |
brightfield |
| BFGS |
Broyden-Fletcher- Goldfarb-Shanno optimization algorithm |
| BFL |
buffered field-effect transistor logic |
| BGA |
ball grid array |
| BHT |
Brinell hardness test |
| Bi |
bismuth |
| BiCMOS |
bipolar complementary metal-oxide semiconductor |
| BIFET |
bipolar field-effect transistor |
| BIM |
binary intensity mask |
| BiMOS |
bipolar metal-oxide semiconductor |
| BIST |
built-in self-test |
| BIT |
bulk ion temperature |
| BITE |
built-in test equipment |
| BMC |
bubble memory controller |
| BMD |
bulk micro defect |
| BOE |
buffered oxide etchant |
| BOR |
bottom of range |
| BOSS |
Book of SEMI Standards; binary object storage system |
| BOX |
buried oxide |
| BPR |
beam profile reflectometry; business process reengineering |
| BPSG |
boron phosphosilicate glass |
| BPTEOS |
BPSG from a TEOS source |
| Br |
bromine |
| BSE |
backscattered electron detection |
| BTAB |
bumped tape automated bonding |
| BV |
breakdown voltage |
| RBB |
base sheet resistance |
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